| 摘要 |
PURPOSE:To improve bonding performance between a dielectric film and a semiconductor layer, reliability of a light-emitting semiconductor device, and its manufacturing yield, by using polyimide as an etching mask for forming a ridge, and by forming dielectric films on both sides of the ridge with the use of a lift-off method. CONSTITUTION:First of all, an n-GaAs clad layer 3, a GRIN-SCH-DQW activating layer 4, a p-AlGaAs clad layer 5, and a p-GaAs cap layer 6 are successively grown on an n-GaAs substrate 1 by a metal organic vapor phase epitaxial growth system. A polyimide 12 is formed in stripe as an etching mask on the cap layer 6. Then, etching is applied to both of the cap layer 6 and the clad layer at a time to form a ridge 11. Subsequently, an alumina film 7 is made grown by sputtering method, and an alumina film 7A bonded on the ridge 11 is immersed in ammonium sulfide, and then the alumina film 7A is eliminated together with the polyimide 12. As a result, an alumina-buried layer 7 is formed on both sides of the ridge 11. |
