| 摘要 |
PURPOSE:To prevent the generation of a crack in a buffer layer and the shortening of the lifetime of a light-emitting device by cutting off a part of the buffer layer formed onto a semiconductor substrate. CONSTITUTION:A buffer layer 2 containing N-type impurities is formed onto a silicon substrate 1. The buffer layer 2 generates internal stress resulting from the difference of thermal expansion coefficients with the silicon substrate 1 in a certain extent, is formed for reducing misfit dislocation resulting from the difference of the lattice constants of the silicon substrate 1 and a first semiconductor layer 3, and is shaped in approximately 1-3mum thickness. The buffer layer 2 is composed of a III-V compound semiconductor film, etc., and contains a donor consisting of silicon, etc., in approximately 10<16>/cm<3>. A part of the buffer layer 2 between the silicon substrate 1 and the first semiconductor layer 3 is cut off, and a void C is formed between the silicon substrate 1 and the first semiconductor layer 3. The void is shaped by cutting-off by using an etchant etching only a specified layer. |
