发明名称 OPTICALLY TRANSPARENT DIFFUSION BARRIER IN ORGANIC LIGHT-EMITTING DIODE AND UPPER ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a structure for protecting an organic light-emitting material from a damage and the inner dissipation of an electrode that is adhered later, while maintaining improved optical property, electron injection, and adhesion performance. SOLUTION: ITO (indium oxide) or Al bottom part layer 24 is deposited on a Si substrate 22, and then 125Å CuPc 26, 600Å diamine 28, and 650Å Alq 3 and 30 are deposited successively. A thin layer 32, made of Alq that functions as a diffusion barrier, is deposited on the Alq 3 covering 30. Further, a transparent cathode material 34, such as ZnS, GaN, ITO, and ZnSe or the combination of these materials is deposited.
申请公布号 JPH10144957(A) 申请公布日期 1998.05.29
申请号 JP19970242246 申请日期 1997.09.08
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 HAIGHT RICHARD ALAN;TROUTMAN RONALD ROY
分类号 H01L51/50;H01L33/00;H01L51/05;H01L51/52;H05B33/26;H05B33/28 主分类号 H01L51/50
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