| 发明名称 |
METHOD FOR FORMING TITANIUM SILICIDE FILM INVOLVED IN A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A method of forming a silicate glass film including phosphorus on a titanium silicide film is provided wherein a silicate glass film including phosphorus is formed on a titanium silicide film and thereafter the silicate glass film is subjected to a heat treatment at a temperature in the range from 650 DEG C. to 950 DEG C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of the silicate glass film and suppress a cohesion reaction of the titanium silicide film.</p> |
| 申请公布号 |
KR0169512(B1) |
申请公布日期 |
1999.02.01 |
| 申请号 |
KR19940035848 |
申请日期 |
1994.12.22 |
| 申请人 |
NEC CORPORATION |
发明人 |
HORICHI, TADAHIKO |
| 分类号 |
H01L21/28;H01L21/768;H01L23/29;H01L29/78;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
