发明名称 |
METHOD FOR FORMING METAL WIRING STRUCTURE |
摘要 |
<P>PROBLEM TO BE SOLVED: To form a flat and thin barrier film, or Ru film in a damascene structure. <P>SOLUTION: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing -NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging the reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas comprising N and H and then purging the reaction space; (vi) repeating the steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007103950(A) |
申请公布日期 |
2007.04.19 |
申请号 |
JP20060273586 |
申请日期 |
2006.10.05 |
申请人 |
ASM JAPAN KK |
发明人 |
JINRIKI HIROSHI;SHIMIZU AKIRA |
分类号 |
H01L21/285;C23C16/18;C23C16/30;H01L21/28;H01L21/3205;H01L21/8242;H01L23/52;H01L27/108 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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