| 发明名称 |
Method for growing nitride compound semiconductor |
| 摘要 |
A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula AlxGa1-xN (where 0</=x</=1) or lnyAlzGa1-y-zN (where 0<y≤1, 0≤z≤1 and 0≤y+z≤1) on a nitride compound semiconductor substrate at a temperature of about 900 DEG C or more. <IMAGE> |
| 申请公布号 |
EP0951077(A2) |
申请公布日期 |
1999.10.20 |
| 申请号 |
EP19990107202 |
申请日期 |
1999.04.13 |
| 申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
ISHIDA, MASAHIRO;YURI, MASAAKI;IMAFUJI, OSAMU;HASHIMOTO, TADAO;ORITA, KENJI |
| 分类号 |
H01L21/205;C30B25/02;H01L21/20;H01S5/00;H01S5/323 |
主分类号 |
H01L21/205 |
| 代理机构 |
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