发明名称 Method of deposition profile simulation
摘要 To provide a simulation method of estimating deposition profile of a contact hole with a high-speed, a simulation method of the invention comprises a step of calculating a flux density incident directly from a gas phase onto each surface point of the contact hole making use of an analytical integration, and a step of calculating shape factors for each pair of two surface points of the contact hole describing flux exchange between the two surface point, making use of another analytical integration.
申请公布号 US6009255(A) 申请公布日期 1999.12.28
申请号 US19970915144 申请日期 1997.08.20
申请人 NEC CORPORATION 发明人 SHINZAWA, TSUTOMU
分类号 H01L21/28;G06F17/50;H01L21/00;H01L21/02;H01L21/205;(IPC1-7):G06F17/50 主分类号 H01L21/28
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