Semiconductor component, e.g. free wheel diode (FWD), used as intelligent power module or component with doped substrate

摘要

The diode has a substrate (1) of first conductivity with a dopant diffusion region (3) of second conductivity and preset thickness on its first main surface. A second, deeper, annular dopant diffusion region (4) of second conductivity surrounds the first dopant diffusion region and has a higher concentration. A first metal layer (8) contacts the first dopant diffusion region on the substrate first main surface at a given distance from the inner edge of the second dopant region. A second metal layer (7) contacts the second main surface of the substrate.