| 摘要 |
<p>A magnetic storage cell includes an active layer 50 and a reference layer 54 which is structured to minimize disruptions to magnetization in its active layer 50. The reference layer 54 is structured so that a pair of its opposing edges 60-62 overlap a pair of corresponding edges of the active layer 50. This may be used minimize the effects of demagnetization fields on the active layer 50. In addition, the reference layer 54 may be thinned at its opposing edges 60-62 to control the effects of coupling fields on the active layer 50 and balance the demagnetization field. <IMAGE></p> |
