| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing compact which can be used in a machining process or a CMP-process for polishing a base material such as a semiconductor substrate, an oxide substrate or a glass substrate or a soft material such as an optical material needing precision processing, and with which the problem related to a waste liquid can be almost solved, a material to be polished is efficiently polished with the finishing equivalent to or better than that attained by a method using a conventional polishing cloth and the formation of polishing cracks can be inhibited, and to provide a polishing surface plate using the polishing compact. SOLUTION: The polishing compact contains inorganic materials, each having hardness of 50 to 400 kg/mm2, in the total amount of >=90 wt.%, has a relative density of 20 to 70% and is composed of particles having an average particle size of 0.001 to 50 μm. The polishing surface plate is obtained by attaching necessary parts to the polishing compact. |
