发明名称 Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation
摘要 The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
申请公布号 US6342712(B1) 申请公布日期 2002.01.29
申请号 US19990341523 申请日期 1999.08.13
申请人 HITACHI, LTD. 发明人 MIKI HIROSHI;KUSHIDA KEIKO;SHIMAMOTO YASUHIRO;TAKATANI SHINICHIRO;FUJISAKI YOSHIHISA;NAKAI HIROMI
分类号 H01L21/02;(IPC1-7):H01L29/92 主分类号 H01L21/02
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