| 摘要 |
A semiconductor light-emitting device having a resonant cavity structure for emitting light perpendicularly to the plane of an active region, and a method of manufacturing the same. A post has a window of an upper electrode and a current aperture of an oxidized layer. Resonated light is emitted through the window and the current aperture. The post is formed by a sidewall of a pre-oxidized layer included in the post is exposed, and the pre-oxidized layer is horizontally oxidized by an oxidizing process by a predetermined distance from the sidewall thereof. An oxidized portion of the pre-oxidized layer becomes a high-resistance portion, and an un-oxidized portion of the pre-oxidized layer becomes the current aperture through which a current or light passes. Since the post is formed by way of self-alignment using the upper electrode and the current aperture is formed by oxidizing the exposed sidewall of the post, the central axis of the window of the upper electrode and the central axis of the current aperture are automatically aligned. Due to the alignment between the window and the current aperture, the electro-optical characteristics of a vertical cavity surface emitting laser (VCSEL) are improved.
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