| 摘要 |
PROBLEM TO BE SOLVED: To enhance the switching speed and the transfer efficiency of a MOS transistor by designing the structure of the gate electrode of the MOS transistor used in a semiconductor integrated circuit device as the output transistor such that the distributed constant like wiring resistance of the gate electrode is easily reduced, and to increase the operable time of an equipment using the semiconductor integrated circuit device by reducing the loss in the semiconductor integrated circuit device. SOLUTION: In the semiconductor integrated circuit device which uses a MOS transistor T1 as a transistor for outputting large current, the source and drain of the transistor T1 are formed such that a plurality of source regions 1a and drain regions 1b surrounded by gate electrodes 2 are connected to each other in parallel. COPYRIGHT: (C)2005,JPO&NCIPI
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