SEMICONDUCTOR DEVICE HAVING TRIPLE GATE TRANSISTOR, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor having a triple gate transistor, and to provide a manufacturing method of the same. SOLUTION: In the semiconductor capable of reducing NBTI and the manufacturing method of the same, a multi-gate transistor includes an active region; a gate insulating film, and channels and electrodes in the active region and is formed on a semiconductor wafer; the active region has upper and both sides and is formed in a first direction; the gate insulating film is formed on the upper and both sides in the active region; the channels are formed on the upper and both sides in the active region; and the gate electrodes are formed on the gate insulating film corresponding to the channels, wherein an SOI layer having a second directional indicator in a second direction is formed on a support substrate, having a first directional indicator in the first direction. COPYRIGHT: (C)2005,JPO&NCIPI