| 摘要 |
PROBLEM TO BE SOLVED: To ensure an alignment margin for a plug, and to reduce a contact resistance. SOLUTION: In a semiconductor device in which a conductor film laminated on a semiconductor substrate or the conductor film through an insulating film is connected by the plugs penetrated to the insulating film, the sectional shape of the plugs is formed in a forward tapered shape. A manufacturing method for the semiconductor device has a process in which metallic films as the plugs are formed on the whole surface of the semiconductor substrate, the process, in which the metallic films are patterned in the shape of the plugs, and the process in which sections among the plugs are filled with the insulating film. According to these constitutions, the effect that the contact resistances of the plugs can be reduced is displayed because the shape of the plugs can be formed in the downward expanded forward tapered shape. Since the contact areas of the plugs are further extended, the manufacturing method is effective for ensuring alignment margins for the plugs. Since the manufacturing method can afford to a machining width, the manufacturing method can also correspond to the further shrinkage of a memory cell. COPYRIGHT: (C)2005,JPO&NCIPI
|
