发明名称 CONTROL METHOD FOR READ/WRITE OF FLASH MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a control method for read/write of a flash memory which is efficiently controlled, has reduced a size of a control chip, and writes fast. <P>SOLUTION: In the control method of read/write of a flash memory 10, a plurality of flash memory blocks are set in one area and, on the basis of a relationship between the area and a logical address 18 corresponding at the time of system operation, an address mapping table (14) in a FAT and a first area and a high-speed access address mapping table corresponding to a partial block in a second area are created. When the logical address retrieved from a host terminal is transmitted to the flash memory, a physical address is detected directly from the table if the logical address exists in the FAT area of the memory; if otherwise, the location is calculated. Then, if the logical address exists within the first area, the physical address is retrieved from the address mapping table; otherwise, high-speed address/address mapping table is retrieved. When the logical address does not exist, other high-speed access/address mapping table is created, it is decided whether or not an area address mapping table in still another area is created, and retrieval is performed until the physical address corresponding to the logical address is detected. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005209058(A) 申请公布日期 2005.08.04
申请号 JP20040016672 申请日期 2004.01.26
申请人 MEGAWIN TECHNOLOGY CO LTD 发明人 YO SHUNMEI
分类号 G11C16/02;G06F12/00;G06F12/02;(IPC1-7):G06F12/02 主分类号 G11C16/02
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