METHOD FOR SURFACE-TREATING CARRIER MEMBER FOR MACHINING SEMICONDUCTOR, AND SURFACE-TREATED ARTICLE

摘要

PROBLEM TO BE SOLVED: To provide an article which is a machining carrier to be used for extremely thinning and extremely smoothing a semiconductor made from a material such as silicon, gallium nitride and gallium phosphorus, and has a high-quality DLC film having a gradient structure caused by carbon ion implantation coated thereon so as to enhance its quality. SOLUTION: A carrier member for machining a semiconductor has a DLC film formed thereon after the base material has been implanted with carbon ions through a plasma-based ion implantation/film-forming process comprising the steps of: introducing a gas of a hydrocarbon compound having at least one carbon atom into the vacuum atmosphere in the apparatus; generating plasma by supplying a high-frequency power to the apparatus; and applying a high-frequency pulse voltage onto the article to be treated. The surface treatment method includes the above process. COPYRIGHT: (C)2007,JPO&INPIT