| 发明名称 |
Method of doping a conductive layer near a via |
| 摘要 |
A method of making a semiconductor device is described. That method comprises forming a conductive layer that contacts a via, such that the conductive layer includes a higher concentration of an electromigration retarding amount of a dopant near the via than away from the via.
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| 申请公布号 |
US7300871(B2) |
申请公布日期 |
2007.11.27 |
| 申请号 |
US20040984604 |
申请日期 |
2004.11.08 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HAU-RIEGE STEFAN;LIST R. SCOTT |
| 分类号 |
H01L21/44;H01L21/768;H01L23/532 |
主分类号 |
H01L21/44 |
| 代理机构 |
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