发明名称 |
Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole |
摘要 |
Methods of forming a cell pad contact hole on an integrated circuit include forming adjacent gates on an integrated circuit substrate having a source/drain region extending between the gates. Gate spacers are formed on facing sidewalls of the adjacent gates. A cell pad contact hole is formed aligned to the gates and gate spacers that exposes the source/drain region in the integrated circuit substrate. A first poly film is formed in the cell pad contact hole. An ion region is formed in the source/drain region by ion-implanting through the first poly film and a second poly film is formed on the first poly film that substantially fills the cell pad contact hole.
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申请公布号 |
US7307008(B2) |
申请公布日期 |
2007.12.11 |
申请号 |
US20030622915 |
申请日期 |
2003.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH YONG-CHUL;JIN GYO-YOUNG |
分类号 |
H01L21/425;H01L27/108;H01L21/336;H01L21/60;H01L21/768 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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