| 摘要 |
<p>PURPOSE:To partially shift the phase of X rays so that the contrast of X-ray intensity can be increased on a substrate and the resolution of X-ray exposure can be extremely improved by putting a material which can shift the phase of X-rays between X-ray absorber patterns. CONSTITUTION:Phase shifters 4 are put between X-ray absorber patterns 2 composed of a heavy metal. After an X-ray transmitting film 1 is formed on a silicon substrate 3, the film 4 of the phase shifters is formed on the film 1. Then an electron-beam resist 27 is applied to the surface of the film 4 and the pattern of the phase shifters is plotted. After developing the resist 27, the phase shifters 4 are formed by etching and the resist 27 is stripped off. After removing the resist 27, an X-ray absorber 2 composed of the heavy metal is formed on the film 1. Then only side wall sections are left by performing anisotropic etching on the absorbers. Finally, the rear surface of the film 1 is exposed by etching the substrate 3 from its rear surface. When this phase shifting effect is utilized, the resolution of X-ray exposure can be improved.</p> |
