发明名称 |
Method for reduced N+ diffusion in strained Si on SiGe substrate |
摘要 |
The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N type impurity contained in the first source and drain regions. The vacancy concentration is reduced by an interstitial element or a vacancy-trapping element in the first source and drain regions. The interstitial element or the vacancy-trapping element is provided by ion-implantation.
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申请公布号 |
US7345329(B2) |
申请公布日期 |
2008.03.18 |
申请号 |
US20050057129 |
申请日期 |
2005.02.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;DOKUMACI OMER H. |
分类号 |
H01L31/112;H01L21/265;H01L21/332;H01L21/336;H01L21/461;H01L21/8234;H01L21/8238;H01L29/10;H01L29/78;H01L31/117 |
主分类号 |
H01L31/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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