发明名称 Magnetic memory
摘要 A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a fixed magnetization direction, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer, and an area of a cross section of the first magnetic layer perpendicular to a stack direction is not less than 0.001 mum<SUP>2</SUP>, and less than 0.02 mum<SUP>2</SUP>.
申请公布号 US7366010(B2) 申请公布日期 2008.04.29
申请号 US20060330196 申请日期 2006.01.12
申请人 TDK CORPORATION 发明人 HOSOBUCHI TOSHIKAZU
分类号 G11C11/15 主分类号 G11C11/15
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