PROGRAMMING METHOD OF NON-VOLATILE MEMORY DEVICE

摘要

A programming method of a non volatile memory device is provided to saturate a threshold voltage within a fast time and to hasten stabilization of a charge by adding a perturbation pulse. In a first programming step(S100), a program voltage is supplied to a memory cell, and is verified by a first verification voltage. A perturbation pulse for hastening stabilization of a charge is supplied to the memory cell passing verification using the first verification voltage(S200). After the perturbation pulse is supplied, the program voltage is verified by a second verification voltage larger than the first verification voltage(S300). When the program voltage does not pass the verification using the second verification voltage, a program voltage is supplied to the memory cell, receives a perturbation pulse, and is verified by the second verification voltage again(S500).