| 摘要 |
A method for fabricating a CMOS image sensor device is provided to reduce the dark current generated in the neighboring of photodiode by curing the dangling bond of the surface of silicon. The method of fabricating a CMOS image sensor comprises the stand-by step of the semiconductor substrate(100), and the formation step of the BPSG film(150) and execute phase of annealing. The stand-by step of the semiconductor substrate is to prepare a semiconductor substrate having a photodiode region and a gate electrode region. The formation step of the BPSG film is performed to form the BPSG film covering the semiconductor substrate. The step of performing the annealing is performed in order to apply annealing on the BPSG film. The method of fabricating the CMOS image sensor more includes the formation step of the hydrogen silsesquioxane film(160), the curing step of the hydrogen silsesquioxane film, and the formation step of the contact hole(170).
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