| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor free-standing substrate that grows a uniform nitride semiconductor layer thereon, and an excellent characteristic nitride semiconductor light emitting device and nitride semiconductor electronic device which are manufactured by using the substrate. <P>SOLUTION: In the nitride semiconductor free-standing substrate having a surface inclined in a range of θ=0.03-1.0° from a C-plane, an off orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is displaced in a range of ϕ=0.5-16° from a particular M-axis orientation of six-fold symmetry M-axis orientations. The substrate does not include a region of -0.5°<ϕ<+0.5° on the surface, where ϕ represents a displacement angle of the off-orientation on a surface of the substrate from the particular M-axis orientation. <P>COPYRIGHT: (C)2009,JPO&INPIT |
