SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a product, which uses a high frequency plasma process wherein a stray or parasitic capacitance coupling is not substantially formed between a plasma source and portions (such as a substrate and wall) of a process chamber having a ground potential or a potential around the ground potential. Ž<P>SOLUTION: The method for manufacturing the product consists of steps of: subjecting a substrate to treatment with a composition of substances; and using the treated substrate so as to finish the product. At least one of the substances is produced from a species generated by a gaseous discharge excited by a helical resonator equipped with a coil. An integrated current supplied by the capacity coupling of plasma into a coil component having a larger potential than a surrounding shield potential is substantially equal to an integrated current supplied by the capacity coupling of plasma into other coil elements having a smaller potential than a surrounding shield potential. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž