| 摘要 |
Provided is a manufacturing method of catalyst-free substrate grown graphene. More specifically, provided is a manufacturing method of catalyst-free substrate grown graphene, comprising the following steps: (a) preparing a catalyst-free layer on a substrate; (b) supplying etching gas and carbon-containing gas and conducting rapid thermal chemical vapor deposition (RTCVD); (c) supplying etching gas in the catalyst-free layer when supplying the carbon-containing gas so as to grow graphene on the catalyst-free layer; and (d) growing graphene on the substrate without the catalyst-free layer by continuously removing all the catalyst-free layers by the etching gas while continuously conducting RTCVD in the process of the step (c). |
