| 发明名称 | Method for forming organic thin film | ||
| 摘要 | A solution for forming an organic thin film wherein the total starting amount of metal surfactants (A) and (B) is 0.05 to 50 wt %, the amount of a hydroxyl group-containing compound generated with the progress of the hydrolysis reaction is 20 ppm to 6 wt %, and the amount of a compound (C) that can interact with the metal surfactant is 0.01 ppm to 8 ppm in terms of metal, relative to the total amount of the solution for forming an organic thin film. | ||
| 申请公布号 | US9416283(B2) | 申请公布日期 | 2016.08.16 |
| 申请号 | US201414486661 | 申请日期 | 2014.09.15 |
| 申请人 | Nippon Soda Co., Ltd. | 发明人 | Hidaka Tomoya;Fujita Yoshitaka;Nakamoto Norifumi;Kumazawa Kazuhisa;Hoshi Eiji |
| 分类号 | C04B41/49;C09D7/12;B05D7/24;C03C17/30;C09K3/18;C08K5/01;C08K5/04;C08K5/05;C08K5/5419;B05D1/18 | 主分类号 | C04B41/49 |
| 代理机构 | Kenyon & Kenyon LLP | 代理人 | Kenyon & Kenyon LLP |
| 主权项 | 1. A solution for forming an organic thin film, comprising wherein a metal surfactant, a compound (C) that can interact with the metal surfactant, and a hydroxyl group-containing compound that is a hydrolysate of the metal surfactant, wherein the amount of the hydroxyl group-containing compound that is a hydrolysate of the metal surfactant is 20 ppm to 6 wt %, and the amount of the compound (C) that can interact with the metal surfactant is 0.03 ppm to 2 ppm in terms of a metal in compound (C), relative to the total amount of the solution for forming an organic thin film. | ||
| 地址 | Tokyo JP | ||