| 摘要 |
According to the present invention, a resistive memory device comprises: a memory element having a crossbar array structure; a voltage supply unit supplying voltage to a word line and a bit line of the memory element; and a control unit setting a supply voltage of the voltage supply unit. At this time, the control unit sets to apply 0V of voltage to a word line of a selected cell of the memory element, and sets to apply a first voltage to the rest of word lines, and sets to apply source voltage to a bit line of a selected cell, and sets to apply a second voltage to the rest of bit lines, wherein a sum of the first voltage and the second voltage is same as a sum of the source voltage and the control unit set the value to be different from each other. |
