Double sided Si(Ge)/Sapphire/III-nitride hybrid structure

摘要

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

主权项

1. A double sided hybrid crystal structure, comprising:
trigonal Sapphire wafer defining a (0001) C-plane and having front and rear sides, the Sapphire wafer being substantially transparent to light in the visible and infrared spectra and also providing insulation with respect to electromagnetic radio frequency noise; a layer of crystalline group IV material comprising one or more of Si, Ge and C and having a cubic diamond structure aligned with the cubic <111>direction on the (0001) C-plane and strained as rhonmbohedron to thereby enable continuous integration of a selected Si(Ge)(C) device onto the rear side of the Sapphire wafer; an integrated crystalline layer on the front side of the. Sapphire wafer, wherein the crystalline layer on the front side of the sapphire comprises a material, wherein the material comprises a III-Nitride material or a ZrO material that enables continuous integration of a selected III-Nitride or ZnO device on the front side of the Sapphire wafer.