Local word line driver

摘要

A memory circuit with a word line driver and control circuitry is disclosed. The plurality of word line drivers are coupled to a plurality of word lines. Word line drivers include a CMOS inverter, which can have an input and an output, and a p-type transistor and an n-type transistor. The output of the CMOS inverter is coupled to one of the plurality of word lines. The control circuitry has multiple modes, including at least a first mode to discharge a particular word line of the plurality of word lines via a first discharge path such as at least a first transistor type of the CMOS inverter; and a second mode to discharge the particular word line of the plurality of word lines via a second discharge path such as at least the a second transistor type of the CMOS inverter.

主权项

1. A memory circuit, comprising:
a plurality of word line drivers coupled to a plurality of word lines, word line drivers in the plurality including a CMOS driver, the CMOS driver having an input and an output coupled to a word line of the plurality of word lines; and control circuitry having at least a first mode to discharge a particular word line of the plurality of word lines via at least a first transistor type of the CMOS driver; the control circuitry having at least a second mode to discharge the particular word line of the plurality of word lines via at least a second transistor type of the CMOS driver, the second transistor type different from the first transistor type, wherein in the second mode the control circuitry applies a negative voltage to the input of the CMOS driver.