发明名称 Semiconductor device
摘要 According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.
申请公布号 US9449654(B2) 申请公布日期 2016.09.20
申请号 US201414328552 申请日期 2014.07.10
申请人 Kabushiki Kaisha Toshiba 发明人 Sugita Masato;Kimura Naoki;Kimura Daisuke
分类号 G11C5/02;G11C5/06;G11C5/04;G11C16/04;G11C14/00 主分类号 G11C5/02
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A semiconductor device comprising: a first memory; a second memory; a third memory; a fourth memory; a substrate that includes: a first layer that includes a wiring pattern formed on a first surface of the substrate,a second layer that includes a wiring pattern formed on a second surface of the substrate,a third layer, provided between the first layer and the second layer, on which a wiring pattern is formed, anda connector that includes electrodes, to be connected with a host device, formed on the second layer of the substrate; a controller configured to control operations of the first, second, third, and fourth memories, wherein the controller is mounted on the first layer of the substrate; and a first signal line configured to connect the controller with the connector, the first signal line including: a first portion disposed on the first layer of the substrate and extending from the controller,a second portion that penetrates through the substrate from the first layer to the second layer, anda third portion disposed on the second layer of the substrate and connected with the electrodes of the connector.
地址 Minato-ku JP