| 摘要 |
The semiconductor device is prepared by forming 1st oxide film and nitride film in order on a substrate, selectively etching the nitride film and forming an open part to define isolating area, implanting nitrogen ion one or more times through the open part until the limited concentration, forming 2nd oxide film on the displayed 1st oxide film and nitride film by CVD method, forming oxide film spacer around the open part by dry anisotropy etching and forming 0.1-0.4 μm groove concurrently, selectively forming a field oxide film by dry oxidizing at high temperature, removing the nitride film and 1st oxide film.
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