| 摘要 |
1,095,450. Magnetic memory circuits. RADIO CORPORATION OF AMERICA. July 9, 1965 [Aug. 5, 1964], No. 29330/65. Heading H3B. In a stress wave magnetic memory, bit-serial information stored in a path 10 is read out by energizing the path electrically to switch stored information flux, thereby creating stress waves which are converted into corresponding bitserial information by a piezo-electric transducer 20. Writing-in is by applying electric bit-serial information from driver 30 to a selected path, while a stress wave from transducer 20 propagates along the path. Each path may comprise a central electric conductor 12 covered by a glass or quartz stress conductor (14) coated with a permalloy film (16), Fig. 2 (not shown), or a suitable magnetic material may itself propagate the stress waves. Alternatively, a substrate may bear a continuous or sectioned magnetic film and insulated electric conductors. A common piezo-electric transducer 20 may transmit and receive stress waves for all the memory paths or a common transmitter and a different common receiver may be provided. Stress absorbing terminations (not shown) prevent undesired reflections of stress waves. A permanent stress bias may be applied to obtain better operating characteristics in accordance with Fig. 3 (not shown). |
