发明名称 |
Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement |
摘要 |
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
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申请公布号 |
US7190602(B2) |
申请公布日期 |
2007.03.13 |
申请号 |
US20040774818 |
申请日期 |
2004.02.09 |
申请人 |
SANDISK 3D LLC |
发明人 |
JOHNSON MARK G.;LEE THOMAS H.;CLEEVES JAMES M. |
分类号 |
G11C5/06;G11C11/56;G11C17/14;G11C17/16;H01L27/102 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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