| 摘要 |
<p>PURPOSE:To get favorable property in ultraviolet ray region to orange-colored region by forming the first layer consisting of an orientated polycrystalline nitride semiconductor 5000Angstrom or less in thickness on a substrate, and providing an operating layer consisting of single crystal nitride semiconductor and two electrodes hereon, and connecting at least one electrode to the first layer. CONSTITUTION:An orientated polycrystal (GaN) 24, 5000Angstrom or less in thickness is made on a substrate 23, and a single crystal (n-GaN) 25 and further a single crystal (p-GaN) 26 are made hereon. And, an electrode 27 is connected onto the oriented polycrystal (GaN) 24, and an electrode 28 is made on the single crystal (p-GaN) 26 too. Here, for the substrate, at least one direction of the periodical disposition of atoms on the surface and at least one direction of the crystal axes of the grid face directly in contact with the board of the nitride semiconductor of the first layer are in the same direction, and the divergence between the interval between the atoms in the former direction and an integer times (not less than 1 and not more than 10) the interval between the atoms in the latter direction should be preferably 5% or less.</p> |
