| 摘要 |
A memory element for use in photoelectric data recording apparatus comprising a layered structure of a conductive substrate, ferroelectric material, discontinuous interface layer, photoconductor, and top conductive electrode. The top conductive electrode an discontinuous interface layer are chosen in conjunction with the photoconductor to act as blocking contacts in the dark and injecting contacts in the light. It is also desirable, although not essential, that the discontinuous interface layer make a blocking contact with the ferroelectric.
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