| 摘要 |
PURPOSE:To make light output characteristic uniform by preventing metal from attaching to an unnecessary part in a vapor deposition process of an electrode. CONSTITUTION:A buried layer 12 of a high resistance compound semiconductor is buried in a reverse mesa type etching groove formed in both sides of a line of a light emitting part 7 parallel to the line keeping electric isolation and a surface is flat as before etching. Therefore, a projecting corner part is not formed in the light emitting part 7 even if a normal mesa type etching groove is thereafter formed for separating each light emitting part 7. As a result, metal is not vapor deposited on an unnecessary part during vapor deposition of an electrode 10, light emitted from the light emitting part 7 is not screened and a p-n junction part is not shortcircuited. |
