| 摘要 |
PURPOSE:To provide a semiconductor light emitting element which can improve monochromaticity of light by restraining radiation of light from a side surface of an active layer. CONSTITUTION:An active layer 103, first and second semiconductor layers 109, 110 of different conductivities formed in each of upper and lower surfaces of the active layer, a crystal material 108 which is formed in at least an area near a side surface of the active layer 103 with a band gap which is smaller than that of the active layer 103 and first and second electrodes 106, 107 electrically connected to both front and rear sides of the active layer 103 are provided. |
