| 摘要 |
<p>PURPOSE:To correct the defect of a phase shift mask with a simple method and further to guarante resolution characteristic sufficient for practical use. CONSTITUTION:For the phase shift mask with auxiliary pattern, auxiliary patterns 4 having a dimension smaller than resolution limit are arranged around a contact hole pattern 3, and phase shifters 5 are formed on these auxiliary patterns 4. Assuming that one of the phase shifters 5 is peeled off and this mask is used for photolithography, a contact hall is protruded toward the auxiliary pattern 4 generating the peeling. Then, this auxiliary pattern 4 is embedded into a carbon layer with convergent ion beam deposition, and light is shielded. According to the simulation of transmitted light intensity distribution, the entire light intensity is lowered at little but the shape of the contact hole is improved to a level having no problem for practical use. This method can be also applied to the mask of the other type such as a self-matching type or the like.</p> |
