| 发明名称 |
Gallium phosphide semiconductor device having improved electrodes |
| 摘要 |
A gallium phosphide semiconductor device comprising an N type gallium phosphide monocrystal, a semiconductor layer formed in or on the monocrystal, and a pair of electrodes formed on the monocrystal and on the semiconductor layer. The electrode on the monocrystal is made of a gold-germanium alloy having a predetermined germanium content.
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| 申请公布号 |
US4228455(A) |
申请公布日期 |
1980.10.14 |
| 申请号 |
US19780937786 |
申请日期 |
1978.08.29 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
YASUDA, NOBUAKI;OGAWA, TAKENOBU;SADAMASA, TETSUO |
| 分类号 |
H01L21/28;H01L21/285;H01L29/45;H01L33/30;H01L33/40;(IPC1-7):H01L23/48;H01L29/46;H01L29/62 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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