| 摘要 |
PURPOSE:To obtain a quantum well type semiconductor laser which has a good oscillation efficiency and low threshold current value by alternately laminating sequentially a plurality of the first semiconductor layers to become carrier enclosure layer section and a plurality of the second semiconductor layers to become a quantum well layer section. CONSTITUTION:Electrons and holes are recombined in the quantum well layer section a1 of a quantum well layer Ai, a light is emitted, and amplified. A plurality (M) of the quantum well layer A1-AM are provided, the quantum well layer section a1 of the layers A1-AM and the carrier enclosure layer section b1 of carrier enclosure layers B1-BM+1 are alternately laminated sequentially to be connected to the electrode E1. Accordingly, electrons are implanted substantially in the same quantity to the layers A1-AM. A laser oscillation can be obtained in relatively high oscillation efficiency, and the threshold current value can be decreased. |
