| 摘要 |
PURPOSE:To execute pattern formation without photoetching process by selectively irradiating a semiconductor substrate with ultraviolet ray and allowing a chemical vapor deposition film to grow on the area irradiated by ultraviolet ray with the chemical vapor growth method with induction by ultraviolet ray. CONSTITUTION:A field oxide film 102 is formed on inactive region of P type silicon substrate 101 and a gate oxide film 103 is formed on active region by the growth method. With a photo mask used, the surface is selectively irradiated with ultraviolet ray and simultaneously it is heated under the Si2H6 gas ambient. Then, non-crystal silicon film 104 is caused to grow by the chemical vapor deposition method with induction by ultraviolet ray. Phosphorus is diffused into the silicon film 104 and thereby it is formed as the polycrystalline silicon film. Thereafter, the arsenic ion is implanted in order to form the source and drain impurity diffused layer 105. Next, a silicon oxide film 106 is formed by the chemical vapor deposition method with induction of ultraviolet ray. Thereby, an electrode 107 is formed. |
