发明名称 LIQUID PHASE EPITAXIAL GROWING METHOD
摘要 PURPOSE:To make possible to control reproducibly so as to make short a growth time of a growing layer by moving a slider in the course of a temperature-descending stage for growing crystal, using a slider through which a solution storing opening whose width in the moving direction of the slider is shorter than the length of a substrate in the corresponding direction is formed. CONSTITUTION:The width (d) of a solution storing opening 27 in the moving direction of a slider 22 is extremely shorter than the length (l) of a substrate 24 in the corresponding direction. The growing solution 26 fills the solution storing opening 27 whose upper portion is capped by a solution pressing member 23. After the substrate 24 and the solution 26 are set on a crystal-growing board, the board is put in a furnace in which a hydrogen or inert gas flows and is heated to a growing temperature or more. After the furnace is kept at a given constant temperature, it is decreased at a constant temperature-descending rate. Reaching the growing temperature, the slider 22 is caused to slide to contact the solution 26 with the substrate 24. Since the width (d) of the solution storing opening 27 is extremely narrow, the solution 26 contacts only a portion of the substrate 24. While the solution 26 is moved at a constant speed (v) across the substrate 24, crystal grows sequentially on the substrate 24.
申请公布号 JPS60157219(A) 申请公布日期 1985.08.17
申请号 JP19840003995 申请日期 1984.01.12
申请人 TATEISHI DENKI KK 发明人 FUJIMOTO AKIRA;WATANABE HIDEAKI;SHIMURA MIKIHIKO
分类号 H01L21/208;(IPC1-7):H01L21/208 主分类号 H01L21/208
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