| 摘要 |
PURPOSE:To prevent occurrence of cracks in an insulating film, by using a plurality of interlayer insulating films, and forming the insulating films, which have reverse lay-up stresses. CONSTITUTION:An insulating film 2 and a first electrode layer 3 are formed on a semiconductor substrate. Thereafter, a CVD oxide film 4, which undergoes vapor growth at a low temperature, is formed to a thickness of about 1 mum. Then tensile stress is yielded, and the semiconductor substrate becomes a recess shape. Thereafter, window is opened 4' selectively at a desired part. Then, a plasma nitride film 5 is formed to a thickness of about 1 mum. Then compressive stress is yielded in the insulating film 5, and the semiconductor substrate becomes of a protruding shape. A contact hole 5 is formed in the nitride film 5, and a second electrode layer 6 is formed. Thus the semiconductor substrate becomes an approximately flat state, and the occurrence of cracks can be reduced.
|
