发明名称 MEMORY DIGIT CIRCUIT
摘要 PURPOSE:To allow information of a memory cell to quickly appear in the output by transmitting stored information of the memory cell to the output of a sense circuit, which is the input of an output circuit, not to cut off the sense circuit even at the time of write operation. CONSTITUTION:Digit lines Dn and the inverse of Dn and led to a sense circuit SA through transistors TRs Q1 and Q2 and TRs Q3 and Q4, and outputs S and the inverse of S of the sense circuit SA are led to an output circuit PT. Emitter of TRs Q1 and Q2 are connected to the digit line Dn, and those of TRs Q3 and Q4 are connected to the digit line the inverse of Dn. A read-out control signal RC is inputted to bases of TRs Q1 and Q3, and write control signals WC and the inverse of WC are inputted to bases of TRs Q2 and Q4 respectively. Collectors of TRs Q1 and Q2 are mutually connected, and those of TRs Q3 and Q4 are mutually connected, and these two connection points are used as input terminals of the sense circuit SA.
申请公布号 JPS63179492(A) 申请公布日期 1988.07.23
申请号 JP19870011615 申请日期 1987.01.20
申请人 NEC CORP 发明人 KAWAGUCHI MANABU
分类号 G11C11/416;G11C11/34 主分类号 G11C11/416
代理机构 代理人
主权项
地址