| 发明名称 |
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MACHINING THE SAME |
| 摘要 |
<p>A nitride semiconductor substrate and a method for processing the nitride semiconductor substrate are provided to determine the position of a crystal orientation mark in a high precision state. A disc type nitride semiconductor substrate(20) is prepared, wherein the substrate includes a plurality of stripe regions(12) with a high defect region. An orientation flat is formed at a predetermined portion of an edge of the substrate by using at least one out of stripe regions as a reference. At this time, the reference stripe region is protruded from the resultant structure. The orientation flat is formed by using a dicing saw.</p> |
| 申请公布号 |
KR20070028227(A) |
申请公布日期 |
2007.03.12 |
| 申请号 |
KR20060084091 |
申请日期 |
2006.09.01 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIURA TAKAYUKI;MEZAKI YOSHIO |
| 分类号 |
H01L21/20;H01L21/02;H01L21/205;H01L21/304 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
