| 摘要 |
PURPOSE:To enhance a positional accuracy of a semiconductor chip in a transverse direction by a method wherein the semiconductor chip is fixed and bonded inside a recessed part in a substrate via a bonding material and a flattening layer is formed between the surface of the semiconductor substrate and the surface of the semiconductor chip. CONSTITUTION:A substrate, with a plane orientation of 100, 110 or the like, which can be etched anisotropically is used for an Si substrate 1. A tapered hole 2 used to fill a chip 3 in which a semiconductor element has been formed is formed in the Si substrate 1 by an anisotropic etching operation using an alkaline solution. The semiconductor chip 3 is fixed to the tapered hole 3 by using a bonding member 4. A groove 9 produced between the Si substrate 1 and the semiconductor chip 3 is filled with a flattening layer 5 which is used both for groove-filling use and for flattening use. An electrode 6, of an element, formed on the Si substrate 1 and an electrode 8 of the semiconductor chip 3 are connected electrically by using an electrode wiring part 7 formed on the flattening layer 5.
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