| 摘要 |
PURPOSE:To eliminate defects of lateral type and vertical type and to realize compactness of a transistor by forming a polysilicon film for leading out of an emitter and a collector connected to an emitter region and a collector region, respectively and by connecting an emitter wiring and a collector wiring through the polysilicon film. CONSTITUTION:One conductivity type semiconductor region 12 is provided with a first another conductivity type region 15. The region 15 is isolated by a second one conductivity type region 16 whose impurity concentration is higher than that of the region 15. One part of the isolated region 15 is used as an emitter region, the other isolated part is used as a collector region and the region 16 is used as a base region. In such a bipolar transistor, a polysilicon film 17a for leasing out of an emitter and a polysilicon film 17b for leading out of a collector are formed which are connected to at least the emitter region and the collector region, respectively. An emitter wiring and a collector wiring are connected through the polysilicon films 17a, 17b. |
