PLANNER CAPACITOR DEVICE AND METHOD OF FABRICATING THEREOF

摘要

The manufacturing method of plate capacitor connecting the MOSFET is composed of the following steps; forming a gate oxide, gate conducting material and insulator in sequence on p-type silicon wafer; removing the gate oxide and insulator to remain the gate electrode by using gate mask; forming a n-type drain and source region at lower part of sidewall of gate electrode followed by forming a insulating spacer at the same region; forming the charge storage electrode region by n-type ion-implantation on the upper side of p+-type region; forming capacitor dielectric material at upper side of the charge storage electrode followed by forming a plate electrode.